All MOSFET. MML65R190PTH Datasheet

 

MML65R190PTH Datasheet and Replacement


   Type Designator: MML65R190PTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 154 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1425 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-262
 

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MML65R190PTH Datasheet (PDF)

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MML65R190PTH

MML65R190P Datasheet MMP65R190P 650V 0.19 N-channel MOSFET Description MML65R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

Datasheet: MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , IRFB4115 , MMN2302 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 .

History: SM6008NF | 2SK1813 | HAT2174N | AP60SL600AIN | DH045N06E

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