All MOSFET. MMN2312 Datasheet

 

MMN2312 Datasheet and Replacement


   Type Designator: MMN2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.04 nS
   Cossⓘ - Output Capacitance: 117.76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOT-23
 

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MMN2312 Datasheet (PDF)

 ..1. Size:147K  m-mos
 mmn2312.pdf pdf_icon

MMN2312

MMN2312Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 31mRDS(ON), Vgs@2.5V, Ids@4.5A = 37mRDS(ON), Vgs@1.8V, Ids@4.0A = 47mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-Cha

 9.1. Size:147K  m-mos
 mmn2302.pdf pdf_icon

MMN2312

MMN2302Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top View N-C

Datasheet: MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 , STP75NF75 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , MMN4307 , MMN4326 .

History: H5N2507P | IXFH110N15T2 | QM09N65F | QM4014D | SWMI4N60D | AP4407GP | IPA60R190E6

Keywords - MMN2312 MOSFET datasheet

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