MMN2312 Specs and Replacement

Type Designator: MMN2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.04 nS

Cossⓘ - Output Capacitance: 117.76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOT-23

MMN2312 substitution

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MMN2312 datasheet

 ..1. Size:147K  m-mos
 mmn2312.pdf pdf_icon

MMN2312

MMN2312 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A = 31m RDS(ON), Vgs@2.5V, Ids@4.5A = 37m RDS(ON), Vgs@1.8V, Ids@4.0A = 47m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top View N-Cha... See More ⇒

 9.1. Size:147K  m-mos
 mmn2302.pdf pdf_icon

MMN2312

MMN2302 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m RDS(ON), Vgs@2.5V, Ids@2.0A = 115m RDS(ON), Vgs@1.8V, Ids@2.0A = 130m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top View N-C... See More ⇒

Detailed specifications: MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, 7N65, MMN25N03, MMN3205, MMN3220, MMN3400, MMN35N03, MMN404, MMN4307, MMN4326

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