All MOSFET. MMN25N03 Datasheet

 

MMN25N03 Datasheet and Replacement


   Type Designator: MMN25N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-252
 

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MMN25N03 Datasheet (PDF)

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MMN25N03

MMN25N03Preliminary Data SheetM-MOS Semiconductor Hong Kong Limited25V N-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@20A = 13.5mRDS(ON), Vgs@4.5V, Ids@20A = 20mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentDPAK Internal Schematic DiagramDrain Gate S

Datasheet: MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , AON7408 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , MMN4307 , MMN4326 , MMN4336 .

History: HTM040N03P | RTU002P02T106 | QS8M51 | 25N10L-TF3-T | MME70R380PRH | CS12N65FA9R | IRFP440R

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