MMN25N03 Specs and Replacement

Type Designator: MMN25N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO-252

MMN25N03 substitution

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MMN25N03 datasheet

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 mmn25n03.pdf pdf_icon

MMN25N03

MMN25N03 Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 25V N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@20A = 13.5m RDS(ON), Vgs@4.5V, Ids@20A = 20m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current DPAK Internal Schematic Diagram Drain Gate S... See More ⇒

Detailed specifications: MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, IRFP250N, MMN3205, MMN3220, MMN3400, MMN35N03, MMN404, MMN4307, MMN4326, MMN4336

Keywords - MMN25N03 MOSFET specs

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