All MOSFET. MMN3400 Datasheet

 

MMN3400 Datasheet and Replacement


   Type Designator: MMN3400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT-23
 

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MMN3400 Datasheet (PDF)

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MMN3400

MMN3400Package Level Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 41mRDS(ON), Vgs@4.5V, Ids@5.0A = 45mRDS(ON), Vgs@2.5V, Ids@4.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT-23 Internal Schematic DiagramDrain Gate Source To

Datasheet: MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , 2N7000 , MMN35N03 , MMN404 , MMN4307 , MMN4326 , MMN4336 , MMN4338 , MMN4364DY , MMN4410 .

History: CEU25N15L | DG2N60-126 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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