MMN3400 Specs and Replacement

Type Designator: MMN3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT-23

MMN3400 substitution

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MMN3400 datasheet

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MMN3400

MMN3400 Package Level Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 41m RDS(ON), Vgs@4.5V, Ids@5.0A = 45m RDS(ON), Vgs@2.5V, Ids@4.0A = 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 Internal Schematic Diagram Drain Gate Source To... See More ⇒

Detailed specifications: MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, AON7408, MMN35N03, MMN404, MMN4307, MMN4326, MMN4336, MMN4338, MMN4364DY, MMN4410

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