MMN45N03 Specs and Replacement
Type Designator: MMN45N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.56 nS
Cossⓘ - Output Capacitance: 325.32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-252
MMN45N03 substitution
- MOSFET ⓘ Cross-Reference Search
MMN45N03 datasheet
mmn45n03.pdf
MMN45N03 Data Sheet M-MOS Semiconductor Hong Kong Limited 25V N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@25A = 8.5m RDS(ON), Vgs@4.5V, Ids@25A = 13m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current DPAK Internal Schematic Diagram Drain Gate Source Top V... See More ⇒
Detailed specifications: MMN4364DY, MMN4410, MMN4414, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, AON7410, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, MMN6968E
Keywords - MMN45N03 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: GT060N10T
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