MMN45N03 Specs and Replacement

Type Designator: MMN45N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.56 nS

Cossⓘ - Output Capacitance: 325.32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252

MMN45N03 substitution

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MMN45N03 datasheet

 ..1. Size:183K  m-mos
mmn45n03.pdf pdf_icon

MMN45N03

MMN45N03 Data Sheet M-MOS Semiconductor Hong Kong Limited 25V N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@25A = 8.5m RDS(ON), Vgs@4.5V, Ids@25A = 13m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current DPAK Internal Schematic Diagram Drain Gate Source Top V... See More ⇒

Detailed specifications: MMN4364DY, MMN4410, MMN4414, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, AON7410, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, MMN6968E

Keywords - MMN45N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.