MMN45N03 Datasheet and Replacement
Type Designator: MMN45N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.56 nS
Cossⓘ - Output Capacitance: 325.32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-252
MMN45N03 substitution
MMN45N03 Datasheet (PDF)
mmn45n03.pdf

MMN45N03Data SheetM-MOS Semiconductor Hong Kong Limited25V N-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@25A = 8.5mRDS(ON), Vgs@4.5V, Ids@25A = 13mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentDPAK Internal Schematic DiagramDrain Gate Source Top V
Datasheet: MMN4364DY , MMN4410 , MMN4414 , MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 , 5N60 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E .
History: IPA90R800C3 | PDC3810V | PDC3803R | TPC8302 | AM2305PE | STP6NK60Z | YJG90G10A
Keywords - MMN45N03 MOSFET datasheet
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History: IPA90R800C3 | PDC3810V | PDC3803R | TPC8302 | AM2305PE | STP6NK60Z | YJG90G10A



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