All MOSFET. MMN45N03 Datasheet

 

MMN45N03 Datasheet and Replacement


   Type Designator: MMN45N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.12 nC
   trⓘ - Rise Time: 7.56 nS
   Cossⓘ - Output Capacitance: 325.32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252
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MMN45N03 Datasheet (PDF)

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MMN45N03

MMN45N03Data SheetM-MOS Semiconductor Hong Kong Limited25V N-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@25A = 8.5mRDS(ON), Vgs@4.5V, Ids@25A = 13mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentDPAK Internal Schematic DiagramDrain Gate Source Top V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LSF65R570GT | CSD16342Q5A

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