MMN4818 Specs and Replacement

Type Designator: MMN4818

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.48 nS

Cossⓘ - Output Capacitance: 239.41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SOP-8

MMN4818 substitution

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MMN4818 datasheet

 ..1. Size:196K  m-mos
 mmn4818.pdf pdf_icon

MMN4818

MMN4818 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@8.5A = 19m RDS(ON), Vgs@4.5V, Ids@6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 2 Gate 1 Source 2 ... See More ⇒

Detailed specifications: MMN4410, MMN4414, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, MMN45N03, 12N60, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, MMN6968E, MMN7230

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