All MOSFET. MMN4818 Datasheet

 

MMN4818 Datasheet and Replacement


   Type Designator: MMN4818
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.48 nS
   Cossⓘ - Output Capacitance: 239.41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOP-8
 

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MMN4818 Datasheet (PDF)

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MMN4818

MMN4818Data SheetM-MOS Semiconductor Hong Kong Limited30V Dual N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 19mRDS(ON), Vgs@4.5V, Ids@6A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 2 Gate 1 Source 2

Datasheet: MMN4410 , MMN4414 , MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , 4N60 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 .

History: IPD25DP06NM | QM2710D

Keywords - MMN4818 MOSFET datasheet

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