MMN4942DY Specs and Replacement

Type Designator: MMN4942DY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.56 nS

Cossⓘ - Output Capacitance: 123.14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SOP-8

MMN4942DY substitution

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MMN4942DY datasheet

 ..1. Size:158K  m-mos
 mmn4942dy.pdf pdf_icon

MMN4942DY

MMN4942DY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 40V Dual N-Channel Enhancement-Mode MOSFET VDS= 40V RDS(ON), Vgs@10V, Ids@7.4A = 21m RDS(ON), Vgs@4.5V, Ids@6.4A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 ... See More ⇒

 8.1. Size:158K  m-mos
 mmn4946bey.pdf pdf_icon

MMN4942DY

MMN4946BEY Data Sheet M-MOS Semiconductor Hong Kong Limited 60V Dual N-Channel Enhancement-Mode MOSFET VDS= 60V RDS(ON), Vgs@10V, Ids@5.3A = 41m RDS(ON), Vgs@4.5V, Ids@4.7A = 52m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N... See More ⇒

Detailed specifications: MMN4414, MMN4418, MMN4422, MMN4430, MMN4444, MMN4446, MMN45N03, MMN4818, 5N65, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, MMN6968E, MMN7230, MMN7402

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