All MOSFET. MMN4942DY Datasheet

 

MMN4942DY Datasheet and Replacement


   Type Designator: MMN4942DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.56 nS
   Cossⓘ - Output Capacitance: 123.14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP-8
 

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MMN4942DY Datasheet (PDF)

 ..1. Size:158K  m-mos
 mmn4942dy.pdf pdf_icon

MMN4942DY

MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2

 8.1. Size:158K  m-mos
 mmn4946bey.pdf pdf_icon

MMN4942DY

MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N

Datasheet: MMN4414 , MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , IRF4905 , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 , MMN7402 .

History: 12N65KL-TQ | SVF4N65CAFJH

Keywords - MMN4942DY MOSFET datasheet

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