All MOSFET. MMN4946BEY Datasheet

 

MMN4946BEY Datasheet and Replacement


   Type Designator: MMN4946BEY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.68 nS
   Cossⓘ - Output Capacitance: 157.26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOP-8
 

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MMN4946BEY Datasheet (PDF)

 ..1. Size:158K  m-mos
 mmn4946bey.pdf pdf_icon

MMN4946BEY

MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N

 8.1. Size:158K  m-mos
 mmn4942dy.pdf pdf_icon

MMN4946BEY

MMN4942DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited40V Dual N-Channel Enhancement-Mode MOSFETVDS= 40VRDS(ON), Vgs@10V, Ids@7.4A = 21mRDS(ON), Vgs@4.5V, Ids@6.4A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2

Datasheet: MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , IRF530 , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 .

History: IRFB42N20DPBF | SRM7N65TF-E1 | SRM7N65DTR-E1 | 2SK1187 | OSG65R380DSF | OSG65R380FSEF | AS3407

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