All MOSFET. MMN55N03 Datasheet

 

MMN55N03 Datasheet and Replacement


   Type Designator: MMN55N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 330.55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

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MMN55N03 Datasheet (PDF)

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MMN55N03

MMN55N03Package Data SheetM-MOS Semiconductor Hong Kong LimitedN-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@30A = 6mRDS(ON), Vgs@4.5V, Ids@30A = 9mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSpecially Designed for DC/DC Converters and Motor DriversFully Characterized Avalanche Voltage and CurrentIm

Datasheet: MMN4422 , MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , AON7506 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 .

History: FTK2N65P

Keywords - MMN55N03 MOSFET datasheet

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