MMN55N03 Specs and Replacement

Type Designator: MMN55N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 330.55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

MMN55N03 substitution

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MMN55N03 datasheet

 ..1. Size:329K  m-mos
 mmn55n03.pdf pdf_icon

MMN55N03

MMN55N03 Package Data Sheet M-MOS Semiconductor Hong Kong Limited N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@30A = 6m RDS(ON), Vgs@4.5V, Ids@30A = 9m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Im... See More ⇒

Detailed specifications: MMN4422, MMN4430, MMN4444, MMN4446, MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, IRFB3607, MMN60NF06, MMN65N03, MMN6680, MMN6968E, MMN7230, MMN7402, MMN75N03, MMN8205

Keywords - MMN55N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.