MMN60NF06 Datasheet and Replacement
Type Designator: MMN60NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 15.4 nS
Cossⓘ - Output Capacitance: 279.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220
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MMN60NF06 Datasheet (PDF)
mmn60nf06.pdf

MMN60NF06Data SheetM-MOS Semiconductor Sdn. Bhd.60V N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@30A = 16mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityFully Characterized Avalanche Voltage and CurrentTO-220 Internal Schematic DiagramDrain Gate Source Top V
mmn600db015b.pdf

MMN600DB015B150V 600A N-ch Power MOSFET ModuleApril 2015 Version 0 RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.8m@VGS=10V 175 junction temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance InsideAPPLICATIONS High efficiency DC/DC Converters ISG EV Products UPS inverterVDS ID RDS(ON)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2N6660C4A | BSC011N03LSI | 15N60 | S85N16RN | HMS11N65F | 2SK2157 | RSH070N05
Keywords - MMN60NF06 MOSFET datasheet
MMN60NF06 cross reference
MMN60NF06 equivalent finder
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History: 2N6660C4A | BSC011N03LSI | 15N60 | S85N16RN | HMS11N65F | 2SK2157 | RSH070N05



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