MMN60NF06 Datasheet and Replacement
Type Designator: MMN60NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15.4 nS
Cossⓘ - Output Capacitance: 279.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220
MMN60NF06 substitution
MMN60NF06 Datasheet (PDF)
mmn60nf06.pdf

MMN60NF06Data SheetM-MOS Semiconductor Sdn. Bhd.60V N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@30A = 16mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityFully Characterized Avalanche Voltage and CurrentTO-220 Internal Schematic DiagramDrain Gate Source Top V
mmn600db015b.pdf

MMN600DB015B150V 600A N-ch Power MOSFET ModuleApril 2015 Version 0 RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.8m@VGS=10V 175 junction temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance InsideAPPLICATIONS High efficiency DC/DC Converters ISG EV Products UPS inverterVDS ID RDS(ON)
Datasheet: MMN4430 , MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , AON7506 , MMN65N03 , MMN6680 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 .
History: AOD504
Keywords - MMN60NF06 MOSFET datasheet
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History: AOD504



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