MMN65N03 Specs and Replacement

Type Designator: MMN65N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.92 nS

Cossⓘ - Output Capacitance: 561.81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-252

MMN65N03 substitution

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MMN65N03 datasheet

 ..1. Size:141K  m-mos
 mmn65n03.pdf pdf_icon

MMN65N03

MMN65N03 Data Sheet M-MOS Semiconductor Hong Kong Limited 25V N-Channel Enhancement-Mode MOSFET VDS= 25V RDS(ON), Vgs@10V, Ids@45A = 5m RDS(ON), Vgs@4.5V, Ids@30A = 7.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current D-PAK Internal Schematic Diagram Drain Gate Source Top V... See More ⇒

Detailed specifications: MMN4444, MMN4446, MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, IRF530, MMN6680, MMN6968E, MMN7230, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220

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