All MOSFET. MMN65N03 Datasheet

 

MMN65N03 Datasheet and Replacement


   Type Designator: MMN65N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.92 nS
   Cossⓘ - Output Capacitance: 561.81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-252
 

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MMN65N03 Datasheet (PDF)

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MMN65N03

MMN65N03Data SheetM-MOS Semiconductor Hong Kong Limited25V N-Channel Enhancement-Mode MOSFETVDS= 25VRDS(ON), Vgs@10V, Ids@45A = 5mRDS(ON), Vgs@4.5V, Ids@30A = 7.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentD-PAK Internal Schematic DiagramDrain Gate Source Top V

Datasheet: MMN4444 , MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , AO4407 , MMN6680 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 .

History: CPH3427-TL | IXFT80N10 | AOI1N60L | DAMH300N150 | GP2M002A060XG | SLF740UZ | CEP75A3

Keywords - MMN65N03 MOSFET datasheet

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