All MOSFET. MMN6680 Datasheet

 

MMN6680 Datasheet and Replacement


   Type Designator: MMN6680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.28 nS
   Cossⓘ - Output Capacitance: 205.32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP-8
 

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MMN6680 Datasheet (PDF)

 ..1. Size:201K  m-mos
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MMN6680

MMN6680Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@12A = 11mRDS(ON), Vgs@4.5V, Ids@12A = 18mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramT

 8.1. Size:638K  macmic
 mmn668a010u1.pdf pdf_icon

MMN6680

MMN668A010U1100V 668A N-ch Power MOSFET ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency DC

Datasheet: MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , IRLB4132 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 , MMN8804 .

History: SSM6N16FE | STD35NF3LLT4 | IXTT140N10P | SSF2341E | 8810B | IRF3707L | BL7N70-A

Keywords - MMN6680 MOSFET datasheet

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