MMN6680 Datasheet and Replacement
Type Designator: MMN6680
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.28 nS
Cossⓘ - Output Capacitance: 205.32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8
MMN6680 substitution
MMN6680 Datasheet (PDF)
mmn6680.pdf
MMN6680Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@12A = 11mRDS(ON), Vgs@4.5V, Ids@12A = 18mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramT
mmn668a010u1.pdf
MMN668A010U1100V 668A N-ch Power MOSFET ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency DC
Datasheet: MMN4446 , MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , CS150N03A8 , MMN6968E , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 , MMN8804 .
History: WST2N7002K | SPB80N03S2 | SPC4516 | MMP60R360PTH | AM4963P | MMP60R580PTH | IRFH5304PBF
Keywords - MMN6680 MOSFET datasheet
MMN6680 cross reference
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MMN6680 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: WST2N7002K | SPB80N03S2 | SPC4516 | MMP60R360PTH | AM4963P | MMP60R580PTH | IRFH5304PBF
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