MMN6680 Specs and Replacement

Type Designator: MMN6680

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.28 nS

Cossⓘ - Output Capacitance: 205.32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP-8

MMN6680 substitution

- MOSFET ⓘ Cross-Reference Search

 

MMN6680 datasheet

 ..1. Size:201K  m-mos
 mmn6680.pdf pdf_icon

MMN6680

MMN6680 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 11m RDS(ON), Vgs@4.5V, Ids@12A = 18m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram T... See More ⇒

 8.1. Size:638K  macmic
 mmn668a010u1.pdf pdf_icon

MMN6680

MMN668A010U1 100V 668A N-ch Power MOSFET Module May 2016 Preliminary RoHS Compliant PRODUCT FEATURES RDS(ON).typ=1.1m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance 2.2 APPLICATIONS High efficiency DC... See More ⇒

Detailed specifications: MMN4446, MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, CS150N03A8, MMN6968E, MMN7230, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804

Keywords - MMN6680 MOSFET specs

 MMN6680 cross reference

 MMN6680 equivalent finder

 MMN6680 pdf lookup

 MMN6680 substitution

 MMN6680 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.