MMN6968E Specs and Replacement
Type Designator: MMN6968E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 899.9 nS
Cossⓘ - Output Capacitance: 97.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSSOP-8
MMN6968E substitution
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MMN6968E datasheet
mmn6968e.pdf
MMN6968E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V ID= 6.5A ESD Protected Gate 2000V RDS(ON), Vgs@4.5V, Ids@6.5A = 24m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Li ion battery packs use Designed for battery s... See More ⇒
Detailed specifications: MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, NCEP15T14, MMN7230, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804, MMN8818E
Keywords - MMN6968E MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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