MMN6968E Specs and Replacement

Type Designator: MMN6968E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 899.9 nS

Cossⓘ - Output Capacitance: 97.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSSOP-8

MMN6968E substitution

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MMN6968E datasheet

 ..1. Size:160K  m-mos
mmn6968e.pdf pdf_icon

MMN6968E

MMN6968E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V ID= 6.5A ESD Protected Gate 2000V RDS(ON), Vgs@4.5V, Ids@6.5A = 24m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Li ion battery packs use Designed for battery s... See More ⇒

Detailed specifications: MMN45N03, MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, NCEP15T14, MMN7230, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804, MMN8818E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.