All MOSFET. MMN6968E Datasheet

 

MMN6968E Datasheet and Replacement


   Type Designator: MMN6968E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 899.9 nS
   Cossⓘ - Output Capacitance: 97.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP-8
 

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MMN6968E Datasheet (PDF)

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MMN6968E

MMN6968EData SheetM-MOS Semiconductor Hong Kong Limited20V Dual N-Channel Enhancement-Mode MOSFETVDS= 20V ID= 6.5A ESD Protected Gate: 2000VRDS(ON), Vgs@4.5V, Ids@6.5A = 24mRDS(ON), Vgs@2.5V, Ids@5.5A = 32mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSpecially Designed for Li ion battery packs useDesigned for battery s

Datasheet: MMN45N03 , MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , IRFP450 , MMN7230 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 , MMN8804 , MMN8818E .

History: MSE20N06N | BRCS050N04BD

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