All MOSFET. MMN7230 Datasheet

 

MMN7230 Datasheet and Replacement


   Type Designator: MMN7230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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MMN7230 Datasheet (PDF)

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MMN7230

MMN7230Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top

Datasheet: MMN4818 , MMN4942DY , MMN4946BEY , MMN55N03 , MMN60NF06 , MMN65N03 , MMN6680 , MMN6968E , IRFP250 , MMN7402 , MMN75N03 , MMN8205 , MMN8218 , MMN8220 , MMN8804 , MMN8818E , MMN8818N .

History: SSW65R099S2E

Keywords - MMN7230 MOSFET datasheet

 MMN7230 cross reference
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