All MOSFET. MMN7230 Datasheet

 

MMN7230 Datasheet and Replacement


   Type Designator: MMN7230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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MMN7230 Datasheet (PDF)

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MMN7230

MMN7230Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: HUFA75321S3ST | DH150N12B | 12N65KG-TF1-T | NCE65N290I | R5016ANJ | BSB280N15NZ3G | ELM13401CA

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