MMN7230 Specs and Replacement
Type Designator: MMN7230
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
MMN7230 substitution
- MOSFET ⓘ Cross-Reference Search
MMN7230 datasheet
mmn7230.pdf
MMN7230 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m RDS(ON), Vgs@2.5V, Ids@2.0A = 115m RDS(ON), Vgs@1.8V, Ids@2.0A = 130m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top ... See More ⇒
Detailed specifications: MMN4818, MMN4942DY, MMN4946BEY, MMN55N03, MMN60NF06, MMN65N03, MMN6680, MMN6968E, AON7506, MMN7402, MMN75N03, MMN8205, MMN8218, MMN8220, MMN8804, MMN8818E, MMN8818N
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