All MOSFET. MMN9926BDY Datasheet

 

MMN9926BDY Datasheet and Replacement


   Type Designator: MMN9926BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.92 nS
   Cossⓘ - Output Capacitance: 159.36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO-8 TSSOP-8
 

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MMN9926BDY Datasheet (PDF)

 ..1. Size:203K  m-mos
 mmn9926bdy.pdf pdf_icon

MMN9926BDY

MMN9926BDYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@8.2A = 20mRDS(ON), Vgs@2.5V, Ids@3.3A = 30mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityIdeal for Li ion battery pack applicationsTSSOP-08 S

 7.1. Size:201K  m-mos
 mmn9926e.pdf pdf_icon

MMN9926BDY

MMN9926EData SheetM-MOS Semiconductor Hong Kong Limited20V Dual N-Channel Enhancement-Mode MOSFETVDS= 20V ID= 8A ESD Protected Gate: 2000VRDS(ON), Vgs@4.5V, Ids@8A = 21mRDS(ON), Vgs@2.5V, Ids@7A = 25mRDS(ON), Vgs@1.8V, Ids@6A = 33mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSpecially Designed for Li ion battery pac

 7.2. Size:205K  m-mos
 mmn9926.pdf pdf_icon

MMN9926BDY

MMN9926Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@6A = 30mRDS(ON), Vgs@2.5V, Ids@5.2A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityIdeal for Li ion battery pack applicationsTSSOP-08 SO-8 Internal Sche

Datasheet: MMN8205 , MMN8218 , MMN8220 , MMN8804 , MMN8818E , MMN8818N , MMN8822 , MMN9926 , 13N50 , MMN9926E , MMP2301 , MMP2311 , MMP2323 , MMP3401 , MMP3415E , MMP3443 , MMP4353 .

History: LND06R062 | 2N4342 | IXTH60N15 | NP82N04NUG | FCH023N65S3 | 2P979V | 2SK3501-01

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