MMP6465 Specs and Replacement

Type Designator: MMP6465

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.72 nS

Cossⓘ - Output Capacitance: 1578.48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TSSOP-8

MMP6465 substitution

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MMP6465 datasheet

 ..1. Size:148K  m-mos
 mmp6465.pdf pdf_icon

MMP6465

MMP6465 Data Sheet M-MOS Semiconductor Hong Kong Limited 12V P-Channel Enhancement-Mode MOSFET VDS= -12V RDS(ON), Vgs@-4.5V, Ids@-8.8A = 12m RDS(ON), Vgs@-2.5V, Ids@-7.4A = 17m RDS(ON), Vgs@-1.8V, Ids@-6.0A = 25m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for battery multiplexing applications TSSOP-8 Internal Sche... See More ⇒

 8.1. Size:149K  m-mos
 mmp6463.pdf pdf_icon

MMP6465

MMP6463 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-7.4A = 15.0m RDS(ON), Vgs@-2.5V, Ids@-6.3A = 20.0m RDS(ON), Vgs@-1.8V, Ids@-5.5A = 27.0m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for battery multiplexing applications TSSOP-8 Internal... See More ⇒

Detailed specifications: MMP60R190PTH, MMP60R195PCTH, MMP60R290PCTH, MMP60R290PTH, MMP60R360PTH, MMP60R580PTH, MMP60R750PTH, MMP6463, EMB04N03H, MMP65R190PTH, MMP6965, MMP6967, MMP6975, MMP7245, MMP7277, MMP7401, MMP9435

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