MPF960 Specs and Replacement
Type Designator: MPF960
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-92
MPF960 substitution
- MOSFET ⓘ Cross-Reference Search
MPF960 datasheet
mpf930 mpf960 mpf990.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPF930/D TMOS Switching MPF930 N Channel Enhancement 3 DRAIN MPF960 MPF990 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain Source Voltage VDS 35 60 90 Vdc Drain Gate Voltage VDG 35 60 90 Vdc 1 2 3 Gate Source Voltage Continuous VGS 20 Vdc CASE 29 05, STYLE 22 ... See More ⇒
Detailed specifications: SM7580NSFH , SM8007NSF , SM8008NSU , SM8206ACT , MPF6659 , MPF6660 , MPF6661 , MPF930 , 60N06 , MPF990 , VEC2315 , VEC2616 , VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 .
History: VEC2616
Keywords - MPF960 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: VEC2616
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