All MOSFET. VEC2315 Datasheet

 

VEC2315 Datasheet and Replacement


   Type Designator: VEC2315
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.137 Ohm
   Package: VEC8
 

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VEC2315 Datasheet (PDF)

 ..1. Size:234K  onsemi
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VEC2315

Ordering number : EN8699AVEC2315P-Channel Power MOSFEThttp://onsemi.com 60V, 2.5A, 137m , Dual VEC8Features ON-resistance RDS(on)1=105m (typ.) 4V drive High-density mounting Protection diode in Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -

Datasheet: SM8008NSU , SM8206ACT , MPF6659 , MPF6660 , MPF6661 , MPF930 , MPF960 , MPF990 , IRFP064N , VEC2616 , VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , VN0104ND .

History: MRF166 | RT3K11M | GMS2302 | PHD18NQ10T | LSB65R125HT | H02N60SI | AO4486

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