VEC2315 Specs and Replacement

Type Designator: VEC2315

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.137 Ohm

Package: VEC8

VEC2315 substitution

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VEC2315 datasheet

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VEC2315

Ordering number EN8699A VEC2315 P-Channel Power MOSFET http //onsemi.com 60V, 2.5A, 137m , Dual VEC8 Features ON-resistance RDS(on)1=105m (typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -... See More ⇒

Detailed specifications: SM8008NSU, SM8206ACT, MPF6659, MPF6660, MPF6661, MPF930, MPF960, MPF990, AO4468, VEC2616, VN0104N2, VN0104N3, VN0104N5, VN0104N6, VN0104N7, VN0104N9, VN0104ND

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