All MOSFET. VEC2315 Datasheet

 

VEC2315 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VEC2315
   Marking Code: UM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.137 Ohm
   Package: VEC8

 VEC2315 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VEC2315 Datasheet (PDF)

 ..1. Size:234K  onsemi
 vec2315.pdf

VEC2315 VEC2315

Ordering number : EN8699AVEC2315P-Channel Power MOSFEThttp://onsemi.com 60V, 2.5A, 137m , Dual VEC8Features ON-resistance RDS(on)1=105m (typ.) 4V drive High-density mounting Protection diode in Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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