VEC2315 Datasheet and Replacement
Type Designator: VEC2315
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.137 Ohm
Package: VEC8
VEC2315 substitution
VEC2315 Datasheet (PDF)
vec2315.pdf
Ordering number : EN8699AVEC2315P-Channel Power MOSFEThttp://onsemi.com 60V, 2.5A, 137m , Dual VEC8Features ON-resistance RDS(on)1=105m (typ.) 4V drive High-density mounting Protection diode in Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -
Datasheet: SM8008NSU , SM8206ACT , MPF6659 , MPF6660 , MPF6661 , MPF930 , MPF960 , MPF990 , AO4468 , VEC2616 , VN0104N2 , VN0104N3 , VN0104N5 , VN0104N6 , VN0104N7 , VN0104N9 , VN0104ND .
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