All MOSFET. VEC2616 Datasheet

 

VEC2616 Datasheet and Replacement


   Type Designator: VEC2616
   Marking Code: UP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: VEC8
 

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VEC2616 Datasheet (PDF)

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VEC2616

Ordering number : ENA1822AVEC2616Power MOSFEThttp://onsemi.com 60V, 3A, 80m , 60V, 2.5A, 137m , Complementary Dual VEC8Features ON-resistance Nch: RDS(on)1=62m (typ.), Pch: RDS(on)1=105m (typ.) 4V drive N-channel MOSFET + P-channel MOSFET Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CP

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History: FQA32N20C

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