All MOSFET. VEC2616 Datasheet

 

VEC2616 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VEC2616
   Marking Code: UP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: VEC8

 VEC2616 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VEC2616 Datasheet (PDF)

 ..1. Size:291K  onsemi
 vec2616.pdf

VEC2616 VEC2616

Ordering number : ENA1822AVEC2616Power MOSFEThttp://onsemi.com 60V, 3A, 80m , 60V, 2.5A, 137m , Complementary Dual VEC8Features ON-resistance Nch: RDS(on)1=62m (typ.), Pch: RDS(on)1=105m (typ.) 4V drive N-channel MOSFET + P-channel MOSFET Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CP

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SSM3K04FU | RCD041N25 | IPP50R500CE | IPP057N06N3G | R6015FNX | SM4024NSK | SM4023NSKP

 

 
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