All MOSFET. VN0106N7 Datasheet

 

VN0106N7 Datasheet and Replacement


   Type Designator: VN0106N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: C-DIP
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VN0106N7 Datasheet (PDF)

 ..1. Size:62K  njs
 vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf pdf_icon

VN0106N7

 8.1. Size:51K  njs
 zvn0106a.pdf pdf_icon

VN0106N7

 8.2. Size:587K  supertex
 vn0106.pdf pdf_icon

VN0106N7

Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

 9.1. Size:588K  supertex
 vn0104.pdf pdf_icon

VN0106N7

Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE50NF180 | BRCS200P03DP | IRFB3004GPBF | STLT30 | DMC4029SK4 | LKK47-06C5 | TSM4424CS

Keywords - VN0106N7 MOSFET datasheet

 VN0106N7 cross reference
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