VN0109N3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: VN0109N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-92

VN0109N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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