VN0109N9 Datasheet and Replacement
Type Designator: VN0109N9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id| ⓘ - Maximum Drain Current: 2 A
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-52
VN0109N9 substitution
VN0109N9 Datasheet (PDF)
vn0109.pdf
Supertex inc. VN0109N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate Low power drive requirementmanufacturing process. This combination produces a device with Ease of parallelingthe power
vn0104.pdf
Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
Datasheet: VN0106N5 , VN0106N6 , VN0106N7 , VN0106N9 , VN0106ND , VN0109N2 , VN0109N3 , VN0109N5 , AON6414A , VN0109ND , VN0300 , VN0300L , VN0335N1 , VN0335N5 , VN0335ND , VN0340N1 , VN0340N5 .
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