VN0109ND PDF and Equivalents Search

 

VN0109ND Specs and Replacement

Type Designator: VN0109ND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: DICE

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VN0109ND datasheet

 8.1. Size:576K  supertex
vn0109.pdf pdf_icon

VN0109ND

Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon-gate Low power drive requirement manufacturing process. This combination produces a device with Ease of paralleling the power... See More ⇒

 9.1. Size:51K  njs
zvn0106a.pdf pdf_icon

VN0109ND

... See More ⇒

 9.2. Size:588K  supertex
vn0104.pdf pdf_icon

VN0109ND

Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒

Detailed specifications: VN0106N6, VN0106N7, VN0106N9, VN0106ND, VN0109N2, VN0109N3, VN0109N5, VN0109N9, IRF3710, VN0300, VN0300L, VN0335N1, VN0335N5, VN0335ND, VN0340N1, VN0340N5, VN0360N1

Keywords - VN0109ND MOSFET specs

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