Справочник MOSFET. VN0109ND

 

VN0109ND MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VN0109ND
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 90 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: DICE

 Аналог (замена) для VN0109ND

 

 

VN0109ND Datasheet (PDF)

 ..1. Size:62K  njs
 vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf

VN0109ND

 8.1. Size:576K  supertex
 vn0109.pdf

VN0109ND VN0109ND

Supertex inc. VN0109N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate Low power drive requirementmanufacturing process. This combination produces a device with Ease of parallelingthe power

 9.1. Size:51K  njs
 zvn0106a.pdf

VN0109ND

 9.2. Size:588K  supertex
 vn0104.pdf

VN0109ND VN0109ND

Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

 9.3. Size:587K  supertex
 vn0106.pdf

VN0109ND VN0109ND

Supertex inc. VN0106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top