VN0300L
MOSFET. Datasheet pdf. Equivalent
Type Designator: VN0300L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 1
A
tonⓘ - Turn-on Time: 30
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO-92
VN0300L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN0300L
Datasheet (PDF)
..1. Size:340K supertex
vn0300 vn0300 vn0300l.pdf
VN0300N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes Free from secondary breakdowna vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power handling capab
0.1. Size:54K motorola
vn0300l.rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN0300L/DTMOS FET TransistorVN0300L3 DRAINNChannel EnhancementMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 V 123DrainGate Voltage VDGR 60 VGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO
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