VN0300L Datasheet and Replacement
Type Designator: VN0300L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
ton ⓘ - Turn-on Time: 30 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-92
VN0300L substitution
VN0300L Datasheet (PDF)
vn0300 vn0300 vn0300l.pdf
VN0300N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes Free from secondary breakdowna vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power handling capab
vn0300l.rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN0300L/DTMOS FET TransistorVN0300L3 DRAINNChannel EnhancementMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 V 123DrainGate Voltage VDGR 60 VGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO
Datasheet: VN0106N9 , VN0106ND , VN0109N2 , VN0109N3 , VN0109N5 , VN0109N9 , VN0109ND , VN0300 , IRFB4110 , VN0335N1 , VN0335N5 , VN0335ND , VN0340N1 , VN0340N5 , VN0360N1 , VN0360N5 , VN0360ND .
History: PSMN009-100P | NCE55P05S | PJD2NA70 | AON7292 | HFB1N65S
Keywords - VN0300L MOSFET datasheet
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VN0300L substitution
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History: PSMN009-100P | NCE55P05S | PJD2NA70 | AON7292 | HFB1N65S
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