All MOSFET. VN0660N3 Datasheet

 

VN0660N3 Datasheet and Replacement


   Type Designator: VN0660N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO-92
 

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VN0660N3 Datasheet (PDF)

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 vn0660n3 vn0660n5.pdf pdf_icon

VN0660N3

VN0660N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92 TO-220 Die600V 20 0.25A VN0660N3 VN0660N5 VN0660NDMIL visual screening available7Features Advanced DMOS TechnologyNot recommended for new designs. Please use VN2460 instead. Free from secondary breakdownThese enhancement-mode

Datasheet: VN0340N5 , VN0360N1 , VN0360N5 , VN0360ND , VN0550 , VN0605T , VN0606 , VN0610LL , IRF1010E , VN0660N5 , VN0808 , VN10K , VN10KCSM4 , VN10K-TO18 , VN10LE , VN10LLS , VN10LM .

Keywords - VN0660N3 MOSFET datasheet

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