All MOSFET. VN0808 Datasheet

 

VN0808 Datasheet and Replacement


   Type Designator: VN0808
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-92
 

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VN0808 Datasheet (PDF)

 ..1. Size:544K  supertex
 vn0808.pdf pdf_icon

VN0808

Supertex inc. VN0808N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 0.1. Size:61K  vishay
 vn0808l-ls vq1006p.pdf pdf_icon

VN0808

VN0808L/LS, VQ1006PVishay SiliconixN-Channel 80- and 90-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0808L 4 @ VGS = 10 V 0.8 to 2 0.380VN0808LS 4 @ VGS = 10 V 0.8 to 2 0.33VQ1006P 90 4 @ VGS = 10 V 0.8 to 2.5 0.4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/

Datasheet: VN0360N5 , VN0360ND , VN0550 , VN0605T , VN0606 , VN0610LL , VN0660N3 , VN0660N5 , 5N60 , VN10K , VN10KCSM4 , VN10K-TO18 , VN10LE , VN10LLS , VN10LM , VN1206 , VN1304 .

History: BUZ73AL | SSM3K329R | PMPB12UNEA | MP4N150 | TK12A55D

Keywords - VN0808 MOSFET datasheet

 VN0808 cross reference
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