VN2210N3 Datasheet and Replacement
Type Designator: VN2210N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-92
VN2210N3 substitution
VN2210N3 Datasheet (PDF)
vn2210.pdf

Supertex inc. VN2210N-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdownThe Supertex VN2210 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produ
Datasheet: VN10LM , VN1206 , VN1304 , VN1306 , VN1310 , VN2106 , VN2110 , VN2210N2 , IRLZ44N , VN2222KM , VN2222LLG , VN2222LM , VN2224 , VN2406 , VN2406D , VN2406L , VN2410 .
History: APT6032AVR | IXFH26N50 | STP18N10 | FW344A | STM121N
Keywords - VN2210N3 MOSFET datasheet
VN2210N3 cross reference
VN2210N3 equivalent finder
VN2210N3 lookup
VN2210N3 substitution
VN2210N3 replacement
History: APT6032AVR | IXFH26N50 | STP18N10 | FW344A | STM121N



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