All MOSFET. VN2210N3 Datasheet

 

VN2210N3 Datasheet and Replacement


   Type Designator: VN2210N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-92
 

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VN2210N3 Datasheet (PDF)

 8.1. Size:650K  supertex
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VN2210N3

Supertex inc. VN2210N-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdownThe Supertex VN2210 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - VN2210N3 MOSFET datasheet

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