VN2450N3 Specs and Replacement
Type Designator: VN2450N3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
Package: TO-92
VN2450N3 substitution
- MOSFET ⓘ Cross-Reference Search
VN2450N3 datasheet
vn2450.pdf
Supertex inc. VN2450 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertex s well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed... See More ⇒
Detailed specifications: VN2224, VN2406, VN2406D, VN2406L, VN2410, VN2410L, VN2410LS, VN2450N8, IRF1407, VN2460N8, VN2460N3, SM8206AO, SM8A01NSW, SM8A02NSF, SM8A02NSFP, SM8A02NSW, SM8A03NSW
Keywords - VN2450N3 MOSFET specs
VN2450N3 cross reference
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VN2450N3 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AON6788
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