VN2450N3 Datasheet and Replacement
Type Designator: VN2450N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
Package: TO-92
VN2450N3 substitution
VN2450N3 Datasheet (PDF)
vn2450.pdf
Supertex inc. VN2450N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertexs well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed
Datasheet: VN2224 , VN2406 , VN2406D , VN2406L , VN2410 , VN2410L , VN2410LS , VN2450N8 , RFP50N06 , VN2460N8 , VN2460N3 , SM8206AO , SM8A01NSW , SM8A02NSF , SM8A02NSFP , SM8A02NSW , SM8A03NSW .
History: IRFR9020
Keywords - VN2450N3 MOSFET datasheet
VN2450N3 cross reference
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VN2450N3 substitution
VN2450N3 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IRFR9020
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