All MOSFET. SM9A01NSF Datasheet

 

SM9A01NSF Datasheet and Replacement


   Type Designator: SM9A01NSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 56 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220
 

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SM9A01NSF Datasheet (PDF)

 ..1. Size:272K  sino
 sm9a01nsf sm9a01nsfp.pdf pdf_icon

SM9A01NSF

SM9A01NSF/SM9A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 900V/12A, RDS(ON)= 0.48 (max.) @ VGS= 10V Reliable and RuggedS SD DG G Avalanche RatedTop View of TO-220 Top View of TO-220-FP Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). Uninterruptible Power

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPW60R230P6 | IRFP140

Keywords - SM9A01NSF MOSFET datasheet

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