All MOSFET. SM9A01NSFP Datasheet

 

SM9A01NSFP Datasheet and Replacement


   Type Designator: SM9A01NSFP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 56 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220FP
 

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SM9A01NSFP Datasheet (PDF)

 ..1. Size:272K  sino
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SM9A01NSFP

SM9A01NSF/SM9A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 900V/12A, RDS(ON)= 0.48 (max.) @ VGS= 10V Reliable and RuggedS SD DG G Avalanche RatedTop View of TO-220 Top View of TO-220-FP Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). Uninterruptible Power

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF1010ESPBF

Keywords - SM9A01NSFP MOSFET datasheet

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