SM9A01NSFP Datasheet and Replacement
Type Designator: SM9A01NSFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-220FP
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SM9A01NSFP Datasheet (PDF)
sm9a01nsf sm9a01nsfp.pdf

SM9A01NSF/SM9A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 900V/12A, RDS(ON)= 0.48 (max.) @ VGS= 10V Reliable and RuggedS SD DG G Avalanche RatedTop View of TO-220 Top View of TO-220-FP Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). Uninterruptible Power
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - SM9A01NSFP MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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