SMC3535 Datasheet and Replacement
Type Designator: SMC3535
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT-89
SMC3535 substitution
SMC3535 Datasheet (PDF)
smc3535.pdf

SMC3535 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3535 is the P-Channel logic enhancement -30V/-5.8A, RDS(ON) =47m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-4.0A, RDS(ON) =54m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-2.5V provide exce
Datasheet: SMC2360 , SMC3054 , SMC3056 , SMC3400 , SMC3401 , SMC3407 , SMC3414 , SMC3415A , 2SK3918 , SMC4420 , SMC4428 , SMC4738 , SMC4812 , SMC8205AS , SMC8205AW , SMC8810 , SMC8810A .
History: SMC3056
Keywords - SMC3535 MOSFET datasheet
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History: SMC3056



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