SMC3535 Specs and Replacement
Type Designator: SMC3535
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT-89
SMC3535 substitution
- MOSFET ⓘ Cross-Reference Search
SMC3535 datasheet
smc3535.pdf
SMC3535 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3535 is the P-Channel logic enhancement -30V/-5.8A, RDS(ON) =47m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-4.0A, RDS(ON) =54m (typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-2.5V provide exce... See More ⇒
Detailed specifications: SMC2360, SMC3054, SMC3056, SMC3400, SMC3401, SMC3407, SMC3414, SMC3415A, EMB04N03H, SMC4420, SMC4428, SMC4738, SMC4812, SMC8205AS, SMC8205AW, SMC8810, SMC8810A
Keywords - SMC3535 MOSFET specs
SMC3535 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRF7904
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