All MOSFET. SMC3535 Datasheet

 

SMC3535 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMC3535
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT-89

 SMC3535 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMC3535 Datasheet (PDF)

 ..1. Size:383K  semtron
 smc3535.pdf

SMC3535 SMC3535

SMC3535 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3535 is the P-Channel logic enhancement -30V/-5.8A, RDS(ON) =47m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-4.0A, RDS(ON) =54m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-2.5V provide exce

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK40S10K3Z

 

 
Back to Top