SML1310IGF Datasheet and Replacement
Type Designator: SML1310IGF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 463 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: TO-247
SML1310IGF substitution
SML1310IGF Datasheet (PDF)
sml1310ig sml1310igf.pdf
SML1310IGFMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET4.504.8110.400.75 FOR HIREL10.800.95APPLICATIONS3.50Dia.3.70VDS 100V1 2 31.0 dia.ID(max) 18A3 placesRDS(on) .044FEATURES0.75 HERMETICALLY SEALED TO257 METAL0.852.54 2.65PACKAGEBSC 2.96 SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT SCREENING
Datasheet: SML100H9 , SML100J19F , SML100L16 , SML100M12MSF , SML10B75F , SML1248NC2A , SML1248PC2A , SML1310IG , IRF640N , SML2005SMD1 , SML20B56F , SML20B67F , SML20J175F , SML20J97F , SML20L100F , SML2308CSM4 , SML25SCM650N2A .
History: NTLJF3118NTAG | IPB60R125CP
Keywords - SML1310IGF MOSFET datasheet
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History: NTLJF3118NTAG | IPB60R125CP
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