IXTK74N20 Specs and Replacement
Type Designator: IXTK74N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO264
IXTK74N20 substitution
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IXTK74N20 datasheet
ixth68n20 ixtk74n20.pdf
VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 200 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 74N20 74 A 68N20 68 A TO-264 AA (I... See More ⇒
Detailed specifications: IXTH6N90, IXTH6N90A, IXTH75N10, IXTH7P50, IXTH8P50, IXTK21N100, IXTK33N45, IXTK33N50, STP80NF70, IXTM10N100, IXTM10N90, IXTM11N80, IXTM12N100, IXTM12N50A, IXTM12N90, IXTM13N80, IXTM14N80
Keywords - IXTK74N20 MOSFET specs
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