IXTK74N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTK74N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 74 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 300 nC
trⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO264
IXTK74N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTK74N20 Datasheet (PDF)
..1. Size:128K ixys
ixth68n20 ixtk74n20.pdf
ixth68n20 ixtk74n20.pdf
VDSS ID25 RDS(on)High CurrentIXTK 74 N20 200 V 74 A 35 mWMegaMOSTMFETIXTH 68 N20 200 V 68 A 35 mWN-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-247AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1.0 M 200 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 74N20 74 A68N20 68 A TO-264 AA (I
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