IXTK74N20 Datasheet and Replacement
Type Designator: IXTK74N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 300 nC
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1275 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO264
IXTK74N20 substitution
IXTK74N20 Datasheet (PDF)
ixth68n20 ixtk74n20.pdf
VDSS ID25 RDS(on)High CurrentIXTK 74 N20 200 V 74 A 35 mWMegaMOSTMFETIXTH 68 N20 200 V 68 A 35 mWN-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-247AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1.0 M 200 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 74N20 74 A68N20 68 A TO-264 AA (I
Datasheet: IXTH6N90 , IXTH6N90A , IXTH75N10 , IXTH7P50 , IXTH8P50 , IXTK21N100 , IXTK33N45 , IXTK33N50 , STP80NF70 , IXTM10N100 , IXTM10N90 , IXTM11N80 , IXTM12N100 , IXTM12N50A , IXTM12N90 , IXTM13N80 , IXTM14N80 .
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