SML6609ASMD05 Specs and Replacement
Type Designator: SML6609ASMD05
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-276AA
SML6609ASMD05 substitution
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SML6609ASMD05 datasheet
sml6609asmd05.pdf
P-CHANNEL POWER MOSFET SML6609ASMD05 Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) VDS Drain Source Voltage -30V VGS Gate Source Voltage 20V ID Continuous Drain Cu... See More ⇒
Detailed specifications: SML3525HN, SML4020AN, SML40H19, SML50A23, SML50C15, SML50J10RU2, SML50J44F, SML50L47F, K4145, SML8028JVR, SML8030LVR, SML8056BVR, SML8065BVR, SML8075BVR, SML80B13F, SML80B16F, SML80J25F
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