All MOSFET. SML6609ASMD05 Datasheet

 

SML6609ASMD05 Datasheet and Replacement


   Type Designator: SML6609ASMD05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-276AA
 

 SML6609ASMD05 substitution

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SML6609ASMD05 Datasheet (PDF)

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SML6609ASMD05

P-CHANNEL POWER MOSFET SML6609ASMD05 Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS Drain Source Voltage -30V VGS Gate Source Voltage 20V ID Continuous Drain Cu

Datasheet: SML3525HN , SML4020AN , SML40H19 , SML50A23 , SML50C15 , SML50J10RU2 , SML50J44F , SML50L47F , IRFB3607 , SML8028JVR , SML8030LVR , SML8056BVR , SML8065BVR , SML8075BVR , SML80B13F , SML80B16F , SML80J25F .

History: RF1S640SM | STH185N10F3-6

Keywords - SML6609ASMD05 MOSFET datasheet

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