All MOSFET. SMMB912DK Datasheet

 

SMMB912DK Datasheet and Replacement


   Type Designator: SMMB912DK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SC-75
 

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SMMB912DK Datasheet (PDF)

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SMMB912DK

New ProductSMMB912DKVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process Using SMMVDS (V) 20Process FlowRDS(on) () at VGS = 4.5 V 0.216 Halogen-free According to IEC 61249-2-21RDS(on) () at VGS = 2.5 V 0.268DefinitionRDS(on) () at VGS = 1.8 V 0.375 TrenchFET Power MOSFETID (A)a 1.5 New Ther

Datasheet: SML901R3AN , SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , SML9030-T254 , SMM2348ES , SMMA511DJ , 10N65 , SMMBFJ310LT1G , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 , SMOS44N50D2 , SMOS44N50D3 , SMOS44N80 .

History: CSE110 | AFN6011S | AM7101P | QM3024M6 | MTN2310N3 | AP2622GY-HF | CSE230

Keywords - SMMB912DK MOSFET datasheet

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