All MOSFET. SMMB912DK Datasheet

 

SMMB912DK MOSFET. Datasheet pdf. Equivalent

Type Designator: SMMB912DK

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: SC-75

SMMB912DK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMMB912DK Datasheet (PDF)

1.1. smmb912dk.pdf Size:210K _update_mosfet

SMMB912DK
SMMB912DK

New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • High Quality Manufacturing Process Using SMM VDS (V) 20 Process Flow RDS(on) (Ω) at VGS = 4.5 V 0.216 • Halogen-free According to IEC 61249-2-21 RDS(on) (Ω) at VGS = 2.5 V 0.268 Definition RDS(on) (Ω) at VGS = 1.8 V 0.375 • TrenchFET® Power MOSFET ID (A)a 1.5 • New Ther

Datasheet: SML901R3AN , SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , SML9030-T254 , SMM2348ES , SMMA511DJ , IRFP250N , SMMBFJ310LT1G , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 , SMOS44N50D2 , SMOS44N50D3 , SMOS44N80 .

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