SMMBFJ310LT1G Spec and Replacement
Type Designator: SMMBFJ310LT1G
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.06 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
Package: SOT-23
SMMBFJ310LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMMBFJ310LT1G Specs
smmbfj310lt1g smmbfj310lt3g.pdf
MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and GATE PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 DRAIN Co... See More ⇒
Detailed specifications: SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , SML9030-T254 , SMM2348ES , SMMA511DJ , SMMB912DK , 5N60 , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 , SMOS44N50D2 , SMOS44N50D3 , SMOS44N80 , SMOS48N50 .
Keywords - SMMBFJ310LT1G MOSFET specs
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