All MOSFET. SMMBFJ310LT1G Datasheet

 

SMMBFJ310LT1G Datasheet and Replacement


   Type Designator: SMMBFJ310LT1G
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 0.06 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
   Package: SOT-23
 

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SMMBFJ310LT1G Datasheet (PDF)

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SMMBFJ310LT1G

MMBFJ309L, MMBFJ310L,SMMBFJ310LJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andGATEPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1 DRAINCo

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