SMOS26N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: SMOS26N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 135 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO-247AD
SMOS26N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMOS26N50 Datasheet (PDF)
1.1. smos21n50 smos26n50.pdf 
Size:135K _update_mosfet
SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 S (TAB) E 4.32 5.49 0.170 0.216 D G F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 G=Gate, D=Drain, K 10.8 11.0 0.426 0.433 S=Source,TAB=Drain
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
