All MOSFET. SMOS26N50 Datasheet

 

SMOS26N50 Datasheet and Replacement


   Type Designator: SMOS26N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 135 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-247AD
 

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SMOS26N50 Datasheet (PDF)

 ..1. Size:135K  sirectifier
 smos21n50 smos26n50.pdf pdf_icon

SMOS26N50

SMOS21N50, SMOS26N50Power MOSFETsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640D 3.55 3.65 0.140 0.144S(TAB) E 4.32 5.49 0.170 0.216DG F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055G=Gate, D=Drain,K 10.8 11.0 0.426 0.433S=Source,TAB=Drain

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SMOS48N50

Keywords - SMOS26N50 MOSFET datasheet

 SMOS26N50 cross reference
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