VN3205N8 Datasheet and Replacement
Type Designator: VN3205N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-89
VN3205N8 substitution
VN3205N8 Datasheet (PDF)
vn3205.pdf

Supertex inc. VN3205N-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdownThis enhancement-mode (normally-off) transistor utilizes Low power drive requirementa vertical DMOS structure and Supertexs well-proven Ease of parallelingsilicon-gate manufacturing process. This combination Low CISS and fast switching s
Datasheet: SMOS48N50 , SMP3003-DL-1E , SMP3003-DL-E , SMP3003-TL-1E , SN7002N , SN7002W , VN30AB , VN3205N3 , IRFZ48N , VN3515L , VN35AB , VN35AK , VN4012L , VN66AD , VN66AK , VN67AB , VN67AD .
History: RU20T7G | RU20P2B | SQR50N06-07L | JMSH1565AKS | JBE083NS | IRFP4229PBF | HSBB3060
Keywords - VN3205N8 MOSFET datasheet
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History: RU20T7G | RU20P2B | SQR50N06-07L | JMSH1565AKS | JBE083NS | IRFP4229PBF | HSBB3060



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