VP0550 Datasheet and Replacement
Type Designator: VP0550
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.054 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
Package: TO-92
VP0550 substitution
VP0550 Datasheet (PDF)
vp0550.pdf

Supertex inc. VP0550P-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdownThe Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ
Datasheet: VNS009D , VNT008A , VNT008D , VNT009A , VNT009D , VP0104 , VP0106 , VP0109 , IRF540N , VP0808 , VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 .
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