VP0550 Specs and Replacement

Type Designator: VP0550

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.054 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm

Package: TO-92

VP0550 substitution

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VP0550 datasheet

 ..1. Size:607K  supertex
 vp0550.pdf pdf_icon

VP0550

Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produ... See More ⇒

Detailed specifications: VNS009D, VNT008A, VNT008D, VNT009A, VNT009D, VP0104, VP0106, VP0109, IRF540, VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3, VP2450N8

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