VP1008CSM4 Specs and Replacement

Type Designator: VP1008CSM4

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: LCC3

VP1008CSM4 substitution

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VP1008CSM4 datasheet

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VP1008CSM4

P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 Low On-Resistance, RDS(on) Moderate Threshold, VGS(th) Low Input Capacitance, CISS Fast Switching Speed Hermetic Ceramic Surface Mount Package Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (... See More ⇒

Detailed specifications: VNT008D, VNT009A, VNT009D, VP0104, VP0106, VP0109, VP0550, VP0808, IRFP460, VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3, VP2450N8, VP3203N3, VP3203N8

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