All MOSFET. VP1008CSM4 Datasheet

 

VP1008CSM4 Datasheet and Replacement


   Type Designator: VP1008CSM4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: LCC3
 

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VP1008CSM4 Datasheet (PDF)

 ..1. Size:145K  semelab
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VP1008CSM4

P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 Low On-Resistance, RDS(on) Moderate Threshold, VGS(th) Low Input Capacitance, CISS Fast Switching Speed Hermetic Ceramic Surface Mount Package Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (

Datasheet: VNT008D , VNT009A , VNT009D , VP0104 , VP0106 , VP0109 , VP0550 , VP0808 , IRF640 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 , VP3203N8 .

History: IPD800N06NG

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