VP2206N3 Specs and Replacement

Type Designator: VP2206N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-92

VP2206N3 substitution

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VP2206N3 datasheet

 8.1. Size:692K  supertex
 vp2206.pdf pdf_icon

VP2206N3

Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces... See More ⇒

Detailed specifications: VP0106, VP0109, VP0550, VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, IRLZ44N, VP2450N3, VP2450N8, VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10

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