VP2450N3 Specs and Replacement

Type Designator: VP2450N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm

Package: TO-92

VP2450N3 substitution

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VP2450N3 datasheet

 8.1. Size:849K  supertex
 vp2450.pdf pdf_icon

VP2450N3

VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2450 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with... See More ⇒

Detailed specifications: VP0109, VP0550, VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3, IRFB4110, VP2450N8, VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20

Keywords - VP2450N3 MOSFET specs

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