VP3203N3 Specs and Replacement

Type Designator: VP3203N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-92

VP3203N3 substitution

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VP3203N3 datasheet

 8.1. Size:581K  supertex
 vp3203.pdf pdf_icon

VP3203N3

VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with... See More ⇒

Detailed specifications: VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3, VP2450N8, IRFP260N, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, VS-FC80NA20, VT6J1

Keywords - VP3203N3 MOSFET specs

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