All MOSFET. VP3203N3 Datasheet

 

VP3203N3 Datasheet and Replacement


   Type Designator: VP3203N3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-92
 

 VP3203N3 substitution

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VP3203N3 Datasheet (PDF)

 8.1. Size:581K  supertex
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VP3203N3

VP3203P-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device with

Datasheet: VP0808 , VP1008CSM4 , VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 , 10N60 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 .

History: RU20E60L | STU10NM65N

Keywords - VP3203N3 MOSFET datasheet

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