VP5225 Specs and Replacement

Type Designator: VP5225

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.645 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-252

VP5225 substitution

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VP5225 datasheet

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VP5225

VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertex s Low input capacitance well-proven, silicon-gate manufacturing process. This Fast switching speeds combination produces a de... See More ⇒

Detailed specifications: VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3, VP2450N8, VP3203N3, VP3203N8, IRFB4227, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, VS-FC80NA20, VT6J1, VT6K1, VT6M1

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs