VP5225 MOSFET. Datasheet pdf. Equivalent
Type Designator: VP5225
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 0.645 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-252
VP5225 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VP5225 Datasheet (PDF)
..1. Size:660K supertex
vp5225.pdf
vp5225.pdf
VP5225P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (-2.4V max.)This low threshold, enhancement-mode (normally-off) High input impedancetransistor utilizes a vertical DMOS structure and Supertexs Low input capacitancewell-proven, silicon-gate manufacturing process. This Fast switching speedscombination produces a de
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
