All MOSFET. VP5225 Datasheet

 

VP5225 Datasheet and Replacement


   Type Designator: VP5225
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.645 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-252
 

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VP5225 Datasheet (PDF)

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VP5225

VP5225P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (-2.4V max.)This low threshold, enhancement-mode (normally-off) High input impedancetransistor utilizes a vertical DMOS structure and Supertexs Low input capacitancewell-proven, silicon-gate manufacturing process. This Fast switching speedscombination produces a de

Datasheet: VP2106 , VP2110 , VP2206N2 , VP2206N3 , VP2450N3 , VP2450N8 , VP3203N3 , VP3203N8 , IRF3710 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 , VT6K1 , VT6M1 .

History: NTS4409N | BUK652R7-30C | TSM9428CS | 2N5115E3 | PHD77NQ03T | TSM9409CS | SVF13N50AF

Keywords - VP5225 MOSFET datasheet

 VP5225 cross reference
 VP5225 equivalent finder
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