All MOSFET. VS-FC80NA20 Datasheet

 

VS-FC80NA20 Datasheet and Replacement


   Type Designator: VS-FC80NA20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 405 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 215 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT-227
 

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VS-FC80NA20 Datasheet (PDF)

 ..1. Size:336K  vishay
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VS-FC80NA20

VS-FC80NA20www.vishay.comVishay SemiconductorsSOT-227 Power Module High Side Chopper - Power MOSFET, 100 AFEATURES3 (D)MOSFET Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt 2 (G)ruggedness1 Fully characterized capacitance and avalanche SOA(S, K) Fully isolated packageSOT-227 Easy to use and parallel

 9.1. Size:280K  vishay
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VS-FC80NA20

VS-FC220SA20www.vishay.comVishay SemiconductorsSOT-227 Power Module Single Switch - Power MOSFET, 220 AFEATURES Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Fully isolated package Easy to use and parallel Low on-resistance Simple drive requirem

Datasheet: VP2450N8 , VP3203N3 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , 2N7000 , VT6J1 , VT6K1 , VT6M1 , HAF1002L , HAF1002S , HAF1003L , HAF1003S , HAF1004L .

History: NCE2312X | OSG95R1K2FF | AP4232BGM-HF | OSG90R250HF | IRFD9012 | OSG90R340KF

Keywords - VS-FC80NA20 MOSFET datasheet

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