VS-FC80NA20 Specs and Replacement

Type Designator: VS-FC80NA20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 405 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 108 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 215 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT-227

VS-FC80NA20 substitution

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VS-FC80NA20 datasheet

 ..1. Size:336K  vishay
 vs-fc80na20.pdf pdf_icon

VS-FC80NA20

VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 (D) MOSFET Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt 2 (G) ruggedness 1 Fully characterized capacitance and avalanche SOA (S, K) Fully isolated package SOT-227 Easy to use and parallel... See More ⇒

 9.1. Size:280K  vishay
 vs-fc220sa20.pdf pdf_icon

VS-FC80NA20

VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Fully isolated package Easy to use and parallel Low on-resistance Simple drive requirem... See More ⇒

Detailed specifications: VP2450N8, VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, 2N7000, VT6J1, VT6K1, VT6M1, HAF1002L, HAF1002S, HAF1003L, HAF1003S, HAF1004L

Keywords - VS-FC80NA20 MOSFET specs

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