VS-FC80NA20 MOSFET. Datasheet pdf. Equivalent
Type Designator: VS-FC80NA20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 405 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 108 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 161 nC
trⓘ - Rise Time: 215 nS
Cossⓘ - Output Capacitance: 810 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT-227
VS-FC80NA20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS-FC80NA20 Datasheet (PDF)
vs-fc80na20.pdf
VS-FC80NA20www.vishay.comVishay SemiconductorsSOT-227 Power Module High Side Chopper - Power MOSFET, 100 AFEATURES3 (D)MOSFET Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt 2 (G)ruggedness1 Fully characterized capacitance and avalanche SOA(S, K) Fully isolated packageSOT-227 Easy to use and parallel
vs-fc220sa20.pdf
VS-FC220SA20www.vishay.comVishay SemiconductorsSOT-227 Power Module Single Switch - Power MOSFET, 220 AFEATURES Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Fully isolated package Easy to use and parallel Low on-resistance Simple drive requirem
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