VT6J1 Specs and Replacement
Type Designator: VT6J1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: VMT6
VT6J1 substitution
- MOSFET ⓘ Cross-Reference Search
VT6J1 datasheet
vt6j1.pdf
1.2V Drive Pch + Pch MOSFET VT6J1 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT6 1.2 0.5 (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) Small package(VMT6). 0.16 0.13 3) Low voltage drive(1.2V drive). 0.4 0.4 0.8 0.1 Abbreviated symbol J01 Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping ... See More ⇒
Detailed specifications: VP3203N3, VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, VS-FC80NA20, P55NF06, VT6K1, VT6M1, HAF1002L, HAF1002S, HAF1003L, HAF1003S, HAF1004L, HAF1004S
Keywords - VT6J1 MOSFET specs
VT6J1 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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