VT6J1 Datasheet and Replacement
Type Designator: VT6J1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: VMT6
VT6J1 substitution
VT6J1 Datasheet (PDF)
vt6j1.pdf

1.2V Drive Pch + Pch MOSFET VT6J1Structure Dimensions (Unit : mm)Silicon P-channel MOSFETVMT61.2 0.5(6) (5) (4)Features1) Low on-resistance.(1) (2) (3)2) Small package(VMT6).0.16 0.133) Low voltage drive(1.2V drive). 0.4 0.40.80.1Abbreviated symbol : J01 ApplicationSwitchingPackaging specifications Inner circuit(6) (5) (4)Package Taping
Datasheet: VP3203N3 , VP3203N8 , VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , IRFB4115 , VT6K1 , VT6M1 , HAF1002L , HAF1002S , HAF1003L , HAF1003S , HAF1004L , HAF1004S .
History: MTN2572H8 | IRF3709ZSPBF | QS5U27 | BRCS10N15DP | SFB052N100BC2 | SM6F23NSF | HGN650N15S
Keywords - VT6J1 MOSFET datasheet
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History: MTN2572H8 | IRF3709ZSPBF | QS5U27 | BRCS10N15DP | SFB052N100BC2 | SM6F23NSF | HGN650N15S



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