VT6K1 Specs and Replacement

Type Designator: VT6K1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 3.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: VMT6

VT6K1 substitution

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VT6K1 datasheet

 ..1. Size:471K  rohm
 vt6k1.pdf pdf_icon

VT6K1

Data Sheet 1.2V Drive Nch + Nch MOSFET VT6K1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT6 1.2 0.5 (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) Small package(VMT6). 0.16 0.13 3) Low voltage drive(1.2V drive). 0.4 0.4 0.8 0.1 Abbreviated symbol K01 Application Switching Packaging specifications Inner circuit (6) (5) (4)... See More ⇒

Detailed specifications: VP3203N8, VP5225, VS-FA40SA50LC, VS-FA72SA50LC, VS-FB190SA10, VS-FC220SA20, VS-FC80NA20, VT6J1, 8205A, VT6M1, HAF1002L, HAF1002S, HAF1003L, HAF1003S, HAF1004L, HAF1004S, HAF2007L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.