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VT6M1 Spec and Replacement


   Type Designator: VT6M1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 3.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: VMT6

 VT6M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VT6M1 Specs

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VT6M1

Data Sheet 1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ VMT6 Silicon P-channel MOSFET 1.2 0.5 (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) Small package(VMT6). 0.16 0.13 3) Low voltage drive(1.2V drive). 0.4 0.4 0.8 0.1 Abbreviated symbol M01 Application Switching Packaging specifications In... See More ⇒

Detailed specifications: VP5225 , VS-FA40SA50LC , VS-FA72SA50LC , VS-FB190SA10 , VS-FC220SA20 , VS-FC80NA20 , VT6J1 , VT6K1 , 7N65 , HAF1002L , HAF1002S , HAF1003L , HAF1003S , HAF1004L , HAF1004S , HAF2007L , HAF2007S .

History: UPA2680T1E | VBC6N2014

Keywords - VT6M1 MOSFET specs

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