All MOSFET. HCD6NC70S Datasheet

 

HCD6NC70S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCD6NC70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: D-PAK

 HCD6NC70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCD6NC70S Datasheet (PDF)

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 hcd6nc70s.pdf

HCD6NC70S HCD6NC70S

Dec 2013BVDSS = 700 VRDS(on) typ = 1.05 HCD6NC70S ID = 5.0 A700V N-Channel Super Junction MOSFETD-PAKFEATURES 2 Originative New Design1 Superior Avalanche Rugged Technology3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operati

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