HCD6NC70S PDF and Equivalents Search

 

HCD6NC70S Specs and Replacement


   Type Designator: HCD6NC70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: D-PAK
 

 HCD6NC70S substitution

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HCD6NC70S datasheet

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HCD6NC70S

Dec 2013 BVDSS = 700 V RDS(on) typ = 1.05 HCD6NC70S ID = 5.0 A 700V N-Channel Super Junction MOSFET D-PAK FEATURES 2 Originative New Design 1 Superior Avalanche Rugged Technology 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 7 nC (Typ.) Extended Safe Operati... See More ⇒

Detailed specifications: HAT2033RJ , HAT2038RJ , HAT2114RJ , HAT2126RP , HAT2153R , HAT2265H , HAT3008RJ , HAT3018RJ , IRFB3607 , HCD7N70S , HCH20NT60V , HCP12NK65V , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV .

History: BLS70R180-I

Keywords - HCD6NC70S MOSFET specs

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