HCD6NC70S Datasheet and Replacement
Type Designator: HCD6NC70S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: D-PAK
HCD6NC70S substitution
HCD6NC70S Datasheet (PDF)
hcd6nc70s.pdf

Dec 2013BVDSS = 700 VRDS(on) typ = 1.05 HCD6NC70S ID = 5.0 A700V N-Channel Super Junction MOSFETD-PAKFEATURES 2 Originative New Design1 Superior Avalanche Rugged Technology3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operati
Datasheet: HAT2033RJ , HAT2038RJ , HAT2114RJ , HAT2126RP , HAT2153R , HAT2265H , HAT3008RJ , HAT3018RJ , AON7506 , HCD7N70S , HCH20NT60V , HCP12NK65V , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV .
History: BLP10N20J-P | GSM1032
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History: BLP10N20J-P | GSM1032



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